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 HiPerFASTTM IGBT
IXGH 28N30 IXGT 28N30
VCES IC25 VCE(sat)typ tfi(typ)
= 300 V = 56 A = 1.6 V = 180 ns
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25C
Maximum Ratings 300 300 20 30 56 28 112 ICM = 56 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
G E (TAB)
TO-247 AD
G
C (TAB) C E C = Collector, TAB = Collector
W C C C C C
G = Gate, E = Emitter,
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g
Features * International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD * High current handling capability * Newest generation HDMOSTM process * MOS Gate turn-on - drive simplicity Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies Advantages * High power density * Suitable for surface mounting * Switching speed for high frequency applications * Easy to mount with 1 screw, (isolated mounting screw hole)
97528A (9/98)
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2.5 TJ = 25C TJ = 125C V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
5 200 1 100 1.6 1.8
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
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IXGH 28N30 IXGT 28N30
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 18 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 130 40 90 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 15 35 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 15 30 130 180 0.8 15 30 0.3 250 250 1.5 500 600 3.0 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
1.5 2.49
0.83 K/W 0.25 K/W
TO-268AA (D3 PAK)
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
Min. Recommended Footprint
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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